RJP60F5DPK IGBT Transistor

The RJP60F5DPK is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJP60F5DPK transistor as follows.

RJP60F5DPK Transistor Specification

Transistor Code		RJP60F5DPK
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P
Collector Power Dissipation (Maximum)	Pc	260.4W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.37V
Collector Current (Maximum)	IC	80A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		100
Rise Time		77

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