RJP60F4DPM IGBT Transistor

The RJP60F4DPM is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJP60F4DPM transistor as follows.

RJP60F4DPM Transistor Specification

Transistor Code		RJP60F4DPM
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3PFM
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.4V
Collector Current (Maximum)	IC	60A
Rise Time		80

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