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RJP6085DPN-00 IGBT Transistor

The RJP6085DPN-00 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJP6085DPN-00 transistor as follows.

Circuit diagram symbol of the RJP6085DPN-00 transistor

RJP6085DPN-00 Transistor Specification

Transistor Code RJP6085DPN-00
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220AB
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.65V
Collector Current (Maximum) IC 40A
Rise Time 400

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