RJP6085DPK IGBT Transistor

The RJP6085DPK is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJP6085DPK transistor as follows.

RJP6085DPK Transistor Specification

Transistor Code		RJP6085DPK
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.65V
Collector Current (Maximum)	IC	40A
Rise Time		400

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