RJP4010AGE IGBT Transistor

The RJP4010AGE is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJP4010AGE transistor as follows.

RJP4010AGE Transistor Specification

Transistor Code		RJP4010AGE
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TSOJ8
Collector Power Dissipation (Maximum)	Pc	1.6W
Collector-Emitter Voltage (Maximum)	VCE	400V
Gate-Emitter Voltage (Maximum)	VGE	6V
Collector-Emitter Saturation Voltage	VCE(on)	4.5V
Collector Current (Maximum)	IC	150A
Operating Junction Temperature (Maximum)		150 oC

UXPython is not the creator or an official representative of the RJP4010AGE IGBT transistor. You can download the official RJP4010AGE IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

IRG7IC30FD IGBT Transistor FF150R12KT3G IGBT Transistor IHW30N120R3 IGBT Transistor IGP06N60T IGBT Transistor HGTP12N60B3D IGBT Transistor IXXH60N65B4 IGBT Transistor MMG75SR120UK IGBT Transistor IGC04R60DE IGBT Transistor STGWT60V60DF IGBT Transistor FGA50N100BNTD2 IGBT Transistor APTGF125X60TE3 IGBT Transistor SKM75GB063D IGBT Transistor MMG200S060B6R IGBT Transistor MUBW50-12E8 IGBT Transistor IXGK60N60C2D1 IGBT Transistor STGB10NB60S IGBT Transistor IKD03N60RF IGBT Transistor MUBW50-06A8 IGBT Transistor IXBF28N300 IGBT Transistor MM60G60B IGBT Transistor