RJP4010AGE IGBT Transistor

The RJP4010AGE is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJP4010AGE transistor as follows.

RJP4010AGE Transistor Specification

Transistor Code		RJP4010AGE
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TSOJ8
Collector Power Dissipation (Maximum)	Pc	1.6W
Collector-Emitter Voltage (Maximum)	VCE	400V
Gate-Emitter Voltage (Maximum)	VGE	6V
Collector-Emitter Saturation Voltage	VCE(on)	4.5V
Collector Current (Maximum)	IC	150A
Operating Junction Temperature (Maximum)		150 oC

UXPython is not the creator or an official representative of the RJP4010AGE IGBT transistor. You can download the official RJP4010AGE IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

IXEH40N120D1 IGBT Transistor 1MBC15-060 IGBT Transistor KGT40N60KDA IGBT Transistor STGB30NB60H IGBT Transistor SKM145GB176D IGBT Transistor STGFW30H65FB IGBT Transistor NGTB25N120FL2WG IGBT Transistor NGD8201A IGBT Transistor SKM300GA173D IGBT Transistor FGH25N120FTDS IGBT Transistor CT20ASJ-8 IGBT Transistor STGP30H60DF IGBT Transistor IXGH10N170 IGBT Transistor GM400HB06CT IGBT Transistor IRG4BC20W-S IGBT Transistor IXBT10N170 IGBT Transistor IXGX400N30A IGBT Transistor IXGA20N100 IGBT Transistor IXGT20N120B IGBT Transistor APTGF75SK60D1 IGBT Transistor