RJP30H2DPK-M0 IGBT Transistor

The RJP30H2DPK-M0 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJP30H2DPK-M0 transistor as follows.

RJP30H2DPK-M0 Transistor Specification

Transistor Code		RJP30H2DPK-M0
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3PSG
Collector Power Dissipation (Maximum)	Pc	60W
Collector-Emitter Voltage (Maximum)	VCE	360V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.4V
Collector Current (Maximum)	IC	35A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		60
Rise Time		180

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