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RJP30E3DPP-M0 IGBT Transistor

The RJP30E3DPP-M0 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJP30E3DPP-M0 transistor as follows.

Circuit diagram symbol of the RJP30E3DPP-M0 transistor

RJP30E3DPP-M0 Transistor Specification

Transistor Code RJP30E3DPP-M0
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220FL
Collector-Emitter Voltage (Maximum) VCE 360V
Collector-Emitter Saturation Voltage VCE(on) 1.6V
Collector Current (Maximum) IC 40A
Rise Time 150

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