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RJH60V3BDPE IGBT Transistor

The RJH60V3BDPE is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJH60V3BDPE transistor as follows.

Circuit diagram symbol of the RJH60V3BDPE transistor

RJH60V3BDPE Transistor Specification

Transistor Code RJH60V3BDPE
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO263
Collector Power Dissipation (Maximum) Pc 113W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 1.6V
Collector Current (Maximum) IC 35A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 60
Rise Time 20

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