RJH60M3DPE IGBT Transistor

The RJH60M3DPE is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJH60M3DPE transistor as follows.

RJH60M3DPE Transistor Specification

Transistor Code		RJH60M3DPE
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		LDPAK(S)
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	35A
Rise Time		80

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