RJH60M2DPE IGBT Transistor

The RJH60M2DPE is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJH60M2DPE transistor as follows.

RJH60M2DPE Transistor Specification

Transistor Code		RJH60M2DPE
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		LDPAK(S)
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.9V
Collector Current (Maximum)	IC	25A
Rise Time		80

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