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RJH60M1DPE IGBT Transistor

The RJH60M1DPE is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJH60M1DPE transistor as follows.

Circuit diagram symbol of the RJH60M1DPE transistor

RJH60M1DPE Transistor Specification

Transistor Code RJH60M1DPE
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package LDPAK(S)
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.9V
Collector Current (Maximum) IC 16A
Rise Time 80

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