RJH60F6BDPQ-A0 IGBT Transistor

The RJH60F6BDPQ-A0 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJH60F6BDPQ-A0 transistor as follows.

RJH60F6BDPQ-A0 Transistor Specification

Transistor Code		RJH60F6BDPQ-A0
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247A
Collector Power Dissipation (Maximum)	Pc	297.6W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.35V
Collector Current (Maximum)	IC	85A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		150
Rise Time		80

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