RJH60D7BDPQ-E0 IGBT Transistor

The RJH60D7BDPQ-E0 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJH60D7BDPQ-E0 transistor as follows.

RJH60D7BDPQ-E0 Transistor Specification

Transistor Code		RJH60D7BDPQ-E0
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	300W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.6V
Collector Current (Maximum)	IC	90A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		180
Rise Time		50

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