RJH60D6DPM IGBT Transistor

The RJH60D6DPM is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJH60D6DPM transistor as follows.

RJH60D6DPM Transistor Specification

Transistor Code		RJH60D6DPM
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3PFM
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.6V
Collector Current (Maximum)	IC	80A
Rise Time		50

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