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RJH60C9DPD IGBT Transistor

The RJH60C9DPD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJH60C9DPD transistor as follows.

Circuit diagram symbol of the RJH60C9DPD transistor

RJH60C9DPD Transistor Specification

Transistor Code RJH60C9DPD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MP3A
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.9V
Collector Current (Maximum) IC 10A
Rise Time 100

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