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RJH60A83RDPE IGBT Transistor

The RJH60A83RDPE is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJH60A83RDPE transistor as follows.

Circuit diagram symbol of the RJH60A83RDPE transistor

RJH60A83RDPE Transistor Specification

Transistor Code RJH60A83RDPE
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO263
Collector Power Dissipation (Maximum) Pc 52W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 2.1V
Collector Current (Maximum) IC 20A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 19
Rise Time 14

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