RJH60A83RDPE IGBT Transistor

The RJH60A83RDPE is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJH60A83RDPE transistor as follows.

RJH60A83RDPE Transistor Specification

Transistor Code		RJH60A83RDPE
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263
Collector Power Dissipation (Maximum)	Pc	52W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		19
Rise Time		14

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