RJH1DF7RDPQ-80 IGBT Transistor

The RJH1DF7RDPQ-80 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJH1DF7RDPQ-80 transistor as follows.

RJH1DF7RDPQ-80 Transistor Specification

Transistor Code		RJH1DF7RDPQ-80
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	250W
Collector-Emitter Voltage (Maximum)	VCE	1350V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.95V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		62
Rise Time		78

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