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RJH1CV7DPK IGBT Transistor

The RJH1CV7DPK is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJH1CV7DPK transistor as follows.

Circuit diagram symbol of the RJH1CV7DPK transistor

RJH1CV7DPK Transistor Specification

Transistor Code RJH1CV7DPK
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3P
Collector Power Dissipation (Maximum) Pc 320W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 70A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 100
Rise Time 45

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