RJH1CV6DPQ-E0 IGBT Transistor

The RJH1CV6DPQ-E0 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJH1CV6DPQ-E0 transistor as follows.

RJH1CV6DPQ-E0 Transistor Specification

Transistor Code		RJH1CV6DPQ-E0
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	60A
Rise Time		200

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