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RJH1CM6DPQ-E0 IGBT Transistor

The RJH1CM6DPQ-E0 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJH1CM6DPQ-E0 transistor as follows.

Circuit diagram symbol of the RJH1CM6DPQ-E0 transistor

RJH1CM6DPQ-E0 Transistor Specification

Transistor Code RJH1CM6DPQ-E0
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 2.4V
Collector Current (Maximum) IC 40A
Rise Time 100

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