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RJH1BF7RDPQ-80 IGBT Transistor

The RJH1BF7RDPQ-80 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJH1BF7RDPQ-80 transistor as follows.

Circuit diagram symbol of the RJH1BF7RDPQ-80 transistor

RJH1BF7RDPQ-80 Transistor Specification

Transistor Code RJH1BF7RDPQ-80
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 250W
Collector-Emitter Voltage (Maximum) VCE 1100V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 1.6V
Collector Current (Maximum) IC 60A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 67
Rise Time 78

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