RJH1BF6RDPQ-80 IGBT Transistor

The RJH1BF6RDPQ-80 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJH1BF6RDPQ-80 transistor as follows.

RJH1BF6RDPQ-80 Transistor Specification

Transistor Code		RJH1BF6RDPQ-80
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	227.2W
Collector-Emitter Voltage (Maximum)	VCE	1100V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	55A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		54
Rise Time		44

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