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RGTH40TS65D IGBT Transistor

The RGTH40TS65D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RGTH40TS65D transistor as follows.

Circuit diagram symbol of the RGTH40TS65D transistor

RGTH40TS65D Transistor Specification

Transistor Code RGTH40TS65D
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 72W
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 1.6V
Collector Current (Maximum) IC 20A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 47
Rise Time 25

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