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RGTH00TS65 IGBT Transistor

The RGTH00TS65 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RGTH00TS65 transistor as follows.

Circuit diagram symbol of the RGTH00TS65 transistor

RGTH00TS65 Transistor Specification

Transistor Code RGTH00TS65
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 138W
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 1.6V
Collector Current (Maximum) IC 50A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 106
Rise Time 63

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