RGT8NS65D IGBT Transistor

The RGT8NS65D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RGT8NS65D transistor as follows.

RGT8NS65D Transistor Specification

Transistor Code		RGT8NS65D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263
Collector Power Dissipation (Maximum)	Pc	32W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.65V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		14
Rise Time		36

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