RGT30NS65D IGBT Transistor

The RGT30NS65D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RGT30NS65D transistor as follows.

RGT30NS65D Transistor Specification

Transistor Code		RGT30NS65D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263
Collector Power Dissipation (Maximum)	Pc	66W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.65V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		35
Rise Time		20

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