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RGT16NS65D IGBT Transistor

The RGT16NS65D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RGT16NS65D transistor as follows.

Circuit diagram symbol of the RGT16NS65D transistor

RGT16NS65D Transistor Specification

Transistor Code RGT16NS65D
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO263
Collector Power Dissipation (Maximum) Pc 47W
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 1.65V
Collector Current (Maximum) IC 8A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 21
Rise Time 13

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