RCP10N35 IGBT Transistor

The RCP10N35 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RCP10N35 transistor as follows.

RCP10N35 Transistor Specification

Transistor Code		RCP10N35
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220
Collector Power Dissipation (Maximum)	Pc	60W
Collector-Emitter Voltage (Maximum)	VCE	350V
Collector-Emitter Saturation Voltage	VCE(on)	4.5V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		800pF
Rise Time		100

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