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RCP10N35 IGBT Transistor

The RCP10N35 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RCP10N35 transistor as follows.

Circuit diagram symbol of the RCP10N35 transistor

RCP10N35 Transistor Specification

Transistor Code RCP10N35
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220
Collector Power Dissipation (Maximum) Pc 60W
Collector-Emitter Voltage (Maximum) VCE 350V
Collector-Emitter Saturation Voltage VCE(on) 4.5V
Collector Current (Maximum) IC 5A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 800pF
Rise Time 100

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