RCM10N35 IGBT Transistor

The RCM10N35 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RCM10N35 transistor as follows.

RCM10N35 Transistor Specification

Transistor Code		RCM10N35
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO204
Collector Power Dissipation (Maximum)	Pc	75W
Collector-Emitter Voltage (Maximum)	VCE	350V
Collector-Emitter Saturation Voltage	VCE(on)	4.5V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		800pF
Rise Time		100

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