PPNHZ52F120B IGBT Transistor

The PPNHZ52F120B is a P-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the PPNHZ52F120B transistor as follows.

PPNHZ52F120B Transistor Specification

Transistor Code		PPNHZ52F120B
Transistor Type		IGBT
IGBT Control Channel Type		P-Channel
Package		TO258
Collector Power Dissipation (Maximum)	Pc	300W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.2V
Collector Current (Maximum)	IC	52A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		2200pF
Rise Time		110

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