OM6526SA IGBT Transistor

The OM6526SA is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the OM6526SA transistor as follows.

OM6526SA Transistor Specification

Transistor Code		OM6526SA
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO254AA
Collector Power Dissipation (Maximum)	Pc	85W
Collector-Emitter Voltage (Maximum)	VCE	1000V
Collector-Emitter Saturation Voltage	VCE(on)	4V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		100
Rise Time		200

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