OM6517SA IGBT Transistor

The OM6517SA is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the OM6517SA transistor as follows.

OM6517SA Transistor Specification

Transistor Code		OM6517SA
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO254AA
Collector Power Dissipation (Maximum)	Pc	125W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	4V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		160
Rise Time		200

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