NTE3311 IGBT Transistor

The NTE3311 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NTE3311 transistor as follows.

NTE3311 Transistor Specification

Transistor Code		NTE3311
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector Current (Maximum)	IC	25A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		1400

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