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NTE3310 IGBT Transistor

The NTE3310 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NTE3310 transistor as follows.

Circuit diagram symbol of the NTE3310 transistor

NTE3310 Transistor Specification

Transistor Code NTE3310
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 100W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 3V
Collector Current (Maximum) IC 15A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 300

UXPython is not the creator or an official representative of the NTE3310 IGBT transistor. You can download the official NTE3310 IGBT transistor datasheet to get more infromation about this transistor.

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