NTE3301 IGBT Transistor

The NTE3301 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NTE3301 transistor as follows.

NTE3301 Transistor Specification

Transistor Code		NTE3301
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220F
Collector Power Dissipation (Maximum)	Pc	40W
Collector-Emitter Voltage (Maximum)	VCE	400V
Gate-Emitter Voltage (Maximum)	VGE	25V
Collector-Emitter Saturation Voltage	VCE(on)	5V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		100

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