NSGM300GB120B IGBT Transistor

The NSGM300GB120B is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NSGM300GB120B transistor as follows.

NSGM300GB120B Transistor Specification

Transistor Code		NSGM300GB120B
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	2100W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	300A
Operating Junction Temperature (Maximum)		125 oC
Collector Capacitance		2000
Rise Time		60

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