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NSGM200GB120B IGBT Transistor

The NSGM200GB120B is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NSGM200GB120B transistor as follows.

Circuit diagram symbol of the NSGM200GB120B transistor

NSGM200GB120B Transistor Specification

Transistor Code NSGM200GB120B
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 1400W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.9V
Collector Current (Maximum) IC 200A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 1600
Rise Time 60

UXPython is not the creator or an official representative of the NSGM200GB120B IGBT transistor. You can download the official NSGM200GB120B IGBT transistor datasheet to get more infromation about this transistor.

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