NSGM150GB120B IGBT Transistor

The NSGM150GB120B is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NSGM150GB120B transistor as follows.

NSGM150GB120B Transistor Specification

Transistor Code		NSGM150GB120B
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	1250W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	150A
Operating Junction Temperature (Maximum)		125 oC
Collector Capacitance		1200
Rise Time		65

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