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NGTG40N120FL2WG IGBT Transistor

The NGTG40N120FL2WG is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGTG40N120FL2WG transistor as follows.

Circuit diagram symbol of the NGTG40N120FL2WG transistor

NGTG40N120FL2WG Transistor Specification

Transistor Code NGTG40N120FL2WG
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 535W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2V
Collector Current (Maximum) IC 40A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 230
Rise Time 42

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