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NGTB60N60SWG IGBT Transistor

The NGTB60N60SWG is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGTB60N60SWG transistor as follows.

Circuit diagram symbol of the NGTB60N60SWG transistor

NGTB60N60SWG Transistor Specification

Transistor Code NGTB60N60SWG
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 119W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2V
Collector Current (Maximum) IC 60A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 169
Rise Time 48

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