NGTB50N60S1WG IGBT Transistor

The NGTB50N60S1WG is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGTB50N60S1WG transistor as follows.

NGTB50N60S1WG Transistor Specification

Transistor Code		NGTB50N60S1WG
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	417W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		252
Rise Time		47

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