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NGTB50N60FLWG IGBT Transistor

The NGTB50N60FLWG is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGTB50N60FLWG transistor as follows.

Circuit diagram symbol of the NGTB50N60FLWG transistor

NGTB50N60FLWG Transistor Specification

Transistor Code NGTB50N60FLWG
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 223W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.65V
Collector Current (Maximum) IC 50A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 300
Rise Time 43

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