NGTB45N60S1WG IGBT Transistor

The NGTB45N60S1WG is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGTB45N60S1WG transistor as follows.

NGTB45N60S1WG Transistor Specification

Transistor Code		NGTB45N60S1WG
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	45A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		149
Rise Time		33

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