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NGTB45N60S1 IGBT Transistor

The NGTB45N60S1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGTB45N60S1 transistor as follows.

Circuit diagram symbol of the NGTB45N60S1 transistor

NGTB45N60S1 Transistor Specification

Transistor Code NGTB45N60S1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 150W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2V
Collector Current (Maximum) IC 45A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 149
Rise Time 33

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