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NGTB45N60S IGBT Transistor

The NGTB45N60S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGTB45N60S transistor as follows.

Circuit diagram symbol of the NGTB45N60S transistor

NGTB45N60S Transistor Specification

Transistor Code NGTB45N60S
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 250W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.2V
Collector Current (Maximum) IC 45A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 120
Rise Time 34

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