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NGTB40N65FL2 IGBT Transistor

The NGTB40N65FL2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGTB40N65FL2 transistor as follows.

Circuit diagram symbol of the NGTB40N65FL2 transistor

NGTB40N65FL2 Transistor Specification

Transistor Code NGTB40N65FL2
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 183W
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.7V
Collector Current (Maximum) IC 40A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 179
Rise Time 40

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