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NGTB40N120FL IGBT Transistor

The NGTB40N120FL is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGTB40N120FL transistor as follows.

Circuit diagram symbol of the NGTB40N120FL transistor

NGTB40N120FL Transistor Specification

Transistor Code NGTB40N120FL
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 104W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2V
Collector Current (Maximum) IC 40A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 240
Rise Time 41

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