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NGTB30N60IHLWG IGBT Transistor

The NGTB30N60IHLWG is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGTB30N60IHLWG transistor as follows.

Circuit diagram symbol of the NGTB30N60IHLWG transistor

NGTB30N60IHLWG Transistor Specification

Transistor Code NGTB30N60IHLWG
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 250W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 30A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 120
Rise Time 30

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