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NGTB30N60FWG IGBT Transistor

The NGTB30N60FWG is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGTB30N60FWG transistor as follows.

Circuit diagram symbol of the NGTB30N60FWG transistor

NGTB30N60FWG Transistor Specification

Transistor Code NGTB30N60FWG
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 167W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.45V
Collector Current (Maximum) IC 30A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 150
Rise Time 31

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