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NGTB30N120L2 IGBT Transistor

The NGTB30N120L2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGTB30N120L2 transistor as follows.

Circuit diagram symbol of the NGTB30N120L2 transistor

NGTB30N120L2 Transistor Specification

Transistor Code NGTB30N120L2
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 534W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.7V
Collector Current (Maximum) IC 30A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 200
Rise Time 35

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